Low noise hybridized detector using charge transfer

摘要

A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.

主权项

1. An infrared photodetector comprising:
a small bandgap layer of first conductivity type; a large bandgap layer of first conductivity type overlying the small bandgap layer; a standoff layer on a portion of the large bandgap layer; a collection well of second conductivity type in the large bandgap layer and in contact with the small bandgap layer so that the small bandgap layer and the collection well form an infrared photodiode; a transfer well of second conductivity type in the standoff layer and the large bandgap layer and spaced from the collection well and the small bandgap layer; and a transistor that includes the collection well, the transfer well and a region between the collection well and the transfer well.