| 摘要 |
A semiconductor memory includes two pull-down transistors provided at opposite ends of each word line of an interleaved-row array memory. Both of these transistors receive the same global phase signal and are therefore both rendered conductive when a word line is deselected. The two pull-down transistors, acting together, sink sufficient current to rapidly pull down each word line of an interleaved-row array DRAMs, thus minimizing shut-off time.
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