Semiconductor integrated circuit device and the method of producing the same

摘要

Plug electrodes of silicon are formed being buried in the through holes in a first insulating film, the plug electrodes being electrically connected to the source and drain regions of a MISFET on the main surface of a semiconductor substrate. Then, a second insulating film is deposited thereon and holes are formed therein such that the plug electrodes of silicon are exposed. A barrier film is formed on the surfaces of the silicon plugs, and in the holes are formed a dielectric to form lower electrodes of the capacitor elements and an upper electrode therefor.