| 摘要 |
<p>In a photolithography process in which a resist film 12 having window 12a is provided on the surface of silicon wafer 10 during the production of a dielectric isolated wafer, after coating back surface resist 12A onto silicon wafer 10, its entire surface is exposed to light to crosslink the entire back surface resist 12A. Consequently, during development and rinsing to avoid flooding of window 12a by back surface resist 12A that has moved around to the front side of the wafer following coating of back surface resist 12A, dissolving of the periphery of back surface resist 12A by that developing solution can be prevented. In addition, after polishing the surface of a dielectric isolated wafer on which dielectric isolated silicon island 10A is formed, low-temperature polysilicon is deposited by CVD, or SOG is coated and baked, onto the surface of the dielectric isolated wafer. As a result, depression 16a that has formed during surface polishing of the dielectric isolated wafer is filled in by low-temperature polysilicon layer 30 or the SOG layer. Next, this low-temperature polysilicon layer 30 or SOG layer is removed from the surface by polishing. At this time, the filled in portion of depression 16a on the wafer surface remains. As a result, the surface of the dielectric isolated wafer can be flattened. <IMAGE></p> |
