| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a TFT for pixel switching and to enhance light shielding property in an electro-optical device. SOLUTION: The electro-optical device includes, on a substrate 10: data lines 6a; scanning lines 11a; pixel electrodes 9a provided in accordance with intersections of the data lines and scanning lines; and transistors 30 each having a semiconductor layer 1a including a first LDD (lightly doped drain) region 1b formed between a channel region 1a' and a source region 1d and a second LDD region 1c formed between the channel region and a drain region 1e, and a gate electrode 3a overlapping the channel region. Further, the device includes a first light shielding section 11a disposed in a layer different from the gate electrode over an insulating film 41a, at least partially overlapping the first and the second LDD regions, and electrically connected to the gate electrode. COPYRIGHT: (C)2008,JPO&INPIT |
