EQUIPMENT FOR ETCHING SEMICONDUCTOR DEVICE AND CONTROL METHODE USED THE SAME

摘要

A semiconductor manufacturing apparatus and a control method thereof are provided to eliminate pollution material occurring from a surface of an electro static chuck formed on a lower end of a reaction chamber during a dry cleaning process of the reaction chamber and to prevent a wafer loaded on the electric static chuck from be slid or damaged, thereby maximizing the production yield. A control method of a semiconductor manufacturing apparatus includes the steps of: loading a reaction chamber(S10); supplying first reaction gas in a reaction chamber and exiting the first reaction gas in a plasma state to perform a deposition or etch process of the wafer(S20); unloading the wafer in the reaction chamber after the deposition or etch process for the wafer is terminated(S30); pumping air in the reaction chamber when the deposition or etch process for a predetermined number of wafers is performed or a process time required in the deposition or etch process becomes a predetermined value(S40,S50); and supplying second reaction gas in the reaction chamber and existing the second reaction gas in the plasma state, and concentrating the second reaction gas in an electro static chuck exposed in a lower end of the reaction chamber to clean a upper surface of the electro static chuck(S60).