| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can be used for a photoelectric conversion functional element with high green light-emitting efficiency, and to provide a manufacturing method for such a semiconductor device. <P>SOLUTION: The semiconductor device 10 includes a substrate 1a made of a material having a bandgap greater than 2.26eV that is a bandgap of ZnTe at room temperature and the same crystalline structure as a sphalerite type structure that is a crystalline structure of ZnTe, a p-ZnTe thin film 2a laminated on the substrate 1a, and an n-ZnTe thin film 2b laminated on the p-ZnTe thin film 2a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
