| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce quantity of dumped semiconductors when manufacturing a semiconductor device comprising an expensive semiconductor, such as silicon. <P>SOLUTION: A wafer W in which a device D is formed on a front W1 is irradiated with transmitting laser beams 31a from the side of a rear W2; the laser beams 31a are condensed to prescribed depth to form an altered layer L between the side of the front W1 of the wafer W and the side of the rear W2; separation is made into a rear-side wafer at a rear side of the altered layer L and a front-side wafer at a front side of the altered layer L; and the altered layer remaining in the front-side wafer is removed to finish the front-side wafer to a prescribed thickness, thus commercially introducing a device for composing the front-side wafer, and recycling the rear-side wafer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
