THREE-DIMENSIONAL (3D) SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING 3D SEMICONDUCTOR DEVICES

摘要

A three-dimensional (3D) semiconductor device includes a stack of conductive layers spaced from each other in a vertical direction, the stack having a staircase-shaped section in a connection region, and ends of the conductive layers constituting treads of the staircase-shaped section, respectively. The 3D semiconductor device further includes buffer patterns disposed on and protruding above the respective ends of the conductive layers, an interconnection structure disposed above the stack and including conductive lines, and contact plugs extending vertically between the conductive lines and the buffer patterns and electrically connected to the conductive layers of the stack via the buffer patterns.

主权项

1. A method of fabricating a three-dimensional semiconductor device, comprising:
alternately forming first and second layers on a substrate to produce a stack in which the second layers are spaced vertically from one another; patterning the stack to expose ends of each of the second layers in a connection region, wherein the patterning produces a staircase-shaped section of the stack in the connection region in which respective ends of the second layers constitute treads of the staircase-shape section; forming buffer patterns on and protruding above the respective ends of the second layers; forming contact plugs on the respective buffer patterns; and forming an interconnection structure on the stack, wherein the interconnection structure includes conductive lines electrically connected to the contact plugs.