SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

摘要

A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes an interconnect which includes an interconnect metal plug surrounded by a second metal layer. The interconnect is adjacent a sidewall of a dielectric, such that an air gap is between the interconnect and the sidewall of the dielectric. A protective barrier is over the interconnect and the air gap, and is over and in direct physical contact with a top surface of the dielectric. The interconnect metal plug surrounded by the second metal layer is less susceptible to damage than an interconnect metal plug that is not surrounded by a second metal layer. The protective barrier in direct physical contact with the dielectric reduces parasitic capacitance, which reduces an RC delay of the semiconductor arrangement, as compared to a semiconductor arrangement that does not have a protective barrier in direct physical contact with a dielectric.

主权项

1. A semiconductor arrangement, comprising:
a dielectric layer; a first metal layer overlying a first portion of the dielectric layer, wherein:
a first void is defined by a first sidewall of the first metal layer and a first sidewall of the dielectric layer, andthe first sidewall of the first metal layer is spaced apart from the first sidewall of the dielectric layer by a first distance; and a first interconnect overlying the first metal layer and comprising:
a first interconnect metal plug; anda first interconnect metal layer surrounding sidewalls and a bottom surface of the first interconnect metal plug, wherein:
a second void is defined by a first sidewall of the first interconnect metal layer and a second sidewall of the dielectric layer, andthe first sidewall of the first interconnect metal layer is spaced apart from the second sidewall of the dielectric layer by a second distance different than the first distance.