Semiconductor Manufacturing Method and Tool

摘要

An overlay measurement and correction method and device is provided. In an embodiment the measurement device takes measurements of a first semiconductor wafer and uses the measurements in a plurality of correction techniques to generate an overlay correction model. The plurality of correction techniques include a first order correction, a first intra-field high order parameter correction and a first inter-field high order parameter correction. The model is used to adjust the exposure parameters for the exposure of the next semiconductor wafer. The process is repeated on each semiconductor wafer for a run-to-run analysis.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
exposing a first semiconductor wafer; performing a first series of measurements on the first semiconductor wafer to obtain a first set of overlay offset measurements; utilizing the first set of overlay offset measurements to generate a first overlay offset model based off of a first order correction, an intra-field higher order correction, and as inter-field higher order correction; generating a first set of overlay offsets from the first overlay offset model; exposing a second semiconductor wafer based at least in part on the first set of overlay offset, wherein the second semiconductor wafer is exposed directly after the exposing the first semiconductor wafer; performing a second series of measurements on the second semiconductor wafer to obtain a second set of overlay offset measurements; and utilizing the second set of overlay offset measurements to generate a second overlay offset model based off of the first order correction, the intra-field higher order correction, and the inter-field higher order correction.