MODIFIED TUNGSTEN SILICON

摘要

A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing the crystalline structure to a tetragonal tungsten silicon layer.

主权项

1. A method of forming a semiconductor structure, the method comprising:
forming an amorphous tungsten silicon layer on an insulator, wherein the amorphous tungsten silicon layer comprises tungsten and silicon, and wherein the amorphous tungsten silicon layer has an amorphous crystalline structure; converting the amorphous tungsten silicon layer to a tetragonal phase tungsten silicon layer, wherein the tetragonal phase tungsten silicon layer has a tetragonal crystalline structure; and forming first conductive material and a second conductive material on the tetragonal phase tungsten silicon layer, wherein the tetragonal phase tungsten silicon layer forms an electrical connection between the first conductive material and the second conductive material.