发明名称 |
FABRICATION OF A TRANSISTOR INCLUDING A TUNNELING LAYER |
摘要 |
In a particular embodiment, an apparatus includes an electron tunnel structure. The electron tunnel structure includes a tunneling layer, a channel layer, a source layer, and a drain layer. The tunneling layer and the channel layer are positioned between the source layer and the drain layer. The transistor device further includes a high-k dielectric layer adjacent to the electron tunnel structure. |
申请公布号 |
WO2016118376(A3) |
申请公布日期 |
2016.09.29 |
申请号 |
WO2016US13180 |
申请日期 |
2016.01.13 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
YUAN, Jun;LI, Xia;YANG, Bin |
分类号 |
H01L29/51;H01L21/28;H01L29/161;H01L29/49;H01L29/66;H01L29/739;H01L29/78 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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