Monolithic integration of GaN and InP components

摘要

A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

主权项

1. A compound semiconductor integrated circuit comprising:
a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; at least one first metallic contact being formed in said recess on top of and in contact with at least a portion of said first region; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, a second electronic component being at least partly included in said layer of a second dielectric material and at least a portion of said second dielectric material being arranged within said recess; at least one second metallic contact being formed below at least a portion of said layer of a second material; said first and second metallic contacts being formed separately and then connected together.