发明名称 |
ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS |
摘要 |
The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus; and it relates to the field of display. The array substrate includes a first thin film transistor and a first electrode which are formed on a substrate. The first thin film transistor includes a gate, a gate insulating layer, an active layer, and an etch stop layer. The etch stop layer is formed with first via holes, and the etch stop layer and the gate insulating layer are formed with a second via hole at a position corresponding to the first electrode. A maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole. |
申请公布号 |
US2016358991(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201514785830 |
申请日期 |
2015.02.27 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Fang Jingang;Xin Longbao;Sun Hongda |
分类号 |
H01L27/32;H01L27/12 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
1. An array substrate comprising:
a substrate, and a first thin film transistor and a first electrode which are formed on the substrate, the first thin film transistor comprising: a gate, a gate insulating layer, an active layer, an etch stop layer, a source and a drain, wherein: the etch stop layer is formed with first via holes, and the source and the drain are electrically connected to the active layer through the first via holes; the etch stop layer and the gate insulating layer cover the first electrode, and are formed with a second via hole at a position corresponding to the first electrode; and a maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole. |
地址 |
Beijing CN |