发明名称 IMAGE SENSOR WITH REDUCED OPTICAL PATH
摘要 Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler grid portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler grid portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.
申请公布号 US2016358970(A1) 申请公布日期 2016.12.08
申请号 US201615244355 申请日期 2016.08.23
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 Ting Shyh-Fann;Wang Ching-Chun;Wang Chen-Jong;Sze Jhy-Jyi;Su Chun-Ming;Wu Wei Chuang;Wang Yu-Jen
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. An image sensor, comprising: a photodiode array disposed within a substrate; a first oxide layer overlying the photodiode array and the substrate; a metal grid comprising a first metal grid structure overlying the first oxide layer and a second metal grid structure overlying the first oxide layer; a capping layer overlying the first metal grid structure and the second metal grid structure; an oxide grid comprising a first oxide grid structure overlying the capping layer and the first metal grid structure and a second oxide grid structure overlying the capping layer and the second metal grid structure; and a filler grid comprising a first filler grid structure between the first oxide grid structure and the second oxide grid structure.
地址 Hsin-Chu TW