SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Provided is a fabricating method of a semiconductor device, including the following. Fin structures are formed on a substrate, and the adjacent fin structures have an opening therebetween. A conductive material layer is formed to cover the fin structures and fill the opening. The conductive material layer and the fin structures are patterned to form a mesh structure. The mesh structure includes first strips extending in a first direction and second strips extending in a second direction. The first strips and the second strips intersect each other, and the mesh structure has holes. The first strips are located on the substrate at positions corresponding to the fin structures. The second strips are located on the substrate, and the conductive material layer in the second strips spans the fin structures. The hole is formed in the opening and surrounded by the first strips and the second strips.

主权项

1. A fabricating method of a semiconductor device, the fabricating method comprising:
forming a plurality of fin structures on a substrate, wherein the adjacent fin structures have an opening therebetween; forming a conductive material layer to cover the fin structures and fill the opening; and patterning the conductive material layer and the fin structures to form a mesh structure that comprises a plurality of first strips extending in a first direction and a plurality of second strips extending in a second direction, wherein the first strips and the second strips intersect each other, and the mesh structure comprises a plurality of holes, wherein the first strips are located on the substrate at positions corresponding to the fin structures, and the second strips are located on the substrate and the conductive material layer in the second strips spans the fin structures, and wherein the hole is respectively located in the opening and surrounded by the first strips and the second strips, and the holes extend to positions closer to the substrate than bottoms of the fin structures.