发明名称 |
METHOD FOR MANUFACTURING BURIED PATTERN USING SPACER PATTERING |
摘要 |
<p>PURPOSE: A method for manufacturing buried pattern using spacer pattering is provided to easily form a pattern having a curved structure by forming a buried pattern having pad regions which are crossed with each other. CONSTITUTION: A spacer(28) has a first sacrifice opening(29) which is defined as a pad region at either side on a first film. A second film pattern has a second sacrifice opening(33) which is defined at either side of a second film by etching the second film through a pad mask. The substrate is etched by using the first film as a etch barrier to form a trench. A buried pattern is buried at the trench.</p> |
申请公布号 |
KR20100121842(A) |
申请公布日期 |
2010.11.19 |
申请号 |
KR20090040735 |
申请日期 |
2009.05.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KOO, SUN YOUNG;KIM, MYUNG OK |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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