发明名称 METHOD FOR MANUFACTURING BURIED PATTERN USING SPACER PATTERING
摘要 <p>PURPOSE: A method for manufacturing buried pattern using spacer pattering is provided to easily form a pattern having a curved structure by forming a buried pattern having pad regions which are crossed with each other. CONSTITUTION: A spacer(28) has a first sacrifice opening(29) which is defined as a pad region at either side on a first film. A second film pattern has a second sacrifice opening(33) which is defined at either side of a second film by etching the second film through a pad mask. The substrate is etched by using the first film as a etch barrier to form a trench. A buried pattern is buried at the trench.</p>
申请公布号 KR20100121842(A) 申请公布日期 2010.11.19
申请号 KR20090040735 申请日期 2009.05.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KOO, SUN YOUNG;KIM, MYUNG OK
分类号 H01L21/027 主分类号 H01L21/027
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