| 发明名称 |
Method for manufacturing gate in semiconductor device |
| 摘要 |
The present invention discloses a method for manufacturing a gate for semiconductor memory devices in which a TaON thin film is used as a gate dielectric film. The disclosed present invention comprises steps of forming a nitride thin film on a semiconductor substrate; forming an amorphous TaON thin film over the nitride films; subjecting the amorphous TaON thin film to effect a crystallization thereof; and forming a polysilicon film as an upper electrode over the crystallized TaON thin film.
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| 申请公布号 |
US2002001934(A1) |
申请公布日期 |
2002.01.03 |
| 申请号 |
US20010895297 |
申请日期 |
2001.07.02 |
| 申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
JOO KWANG CHUL;KIM HAI WON |
| 分类号 |
H01L21/28;H01L21/314;H01L21/318;H01L29/51;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
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