发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 A nonvolatile semiconductor storage device in which to write data, a constant amount of charge is stored in each write cell and hot electrons generated when the charge is drained through a memory cell are injected into a floating gate. Variation in the writing characteristics of the nonvolatile semiconductor storage device is reduced and high speed writing can be realized.
申请公布号 WO02056316(A1) 申请公布日期 2002.07.18
申请号 WO2001JP00133 申请日期 2001.01.12
申请人 HITACHI, LTD.;HITACHI DEVICE ENGINEERING CO., LTD.;HITACHI ULSI SYSTEMS CO., LTD.;KURATA, HIDEAKI;KOBAYASHI, NAOKI;SAEKI, SHUNICHI;KOBAYASHI, TAKASHI;KAWAHARA, TAKAYUKI;YOSHIDA, KEIICHI;KANAMITSU, MICHITARO;KUBONO, SHOUJI;NOZOE, ATSUSHI 发明人 KURATA, HIDEAKI;KOBAYASHI, NAOKI;SAEKI, SHUNICHI;KOBAYASHI, TAKASHI;KAWAHARA, TAKAYUKI;YOSHIDA, KEIICHI;KANAMITSU, MICHITARO;KUBONO, SHOUJI;NOZOE, ATSUSHI
分类号 G11C11/56;G11C16/04;G11C16/10;G11C16/16;G11C16/34;H01L27/115;(IPC1-7):G11C16/10 主分类号 G11C11/56
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