Laser diode

摘要

A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer (180). An InGaN laser diode structure utilizes ITO upper cladding layer (180), with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding layer to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer (170) below the SiO2 isolation layer (185). An optional p-type current barrier layer (160) (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region (150) and a p-GaN upper waveguide layer (170) to impede electron leakage from the InGaN-MQW region (150). <IMAGE>