发明名称 |
TWO-LAYER FILM AND METHOD OF FORMING PATTERN WITH THE SAME |
摘要 |
The invention concerns a lift-off process for patterning layers that are deposited and/or sputtered. The invention provides a two-layer resist and a patterning method using the resist. The patterning method can readily produce burr-free layers on a substrate. <??>The method comprises the steps of: sequentially applying positive radiation-sensitive resin compositions 1 and 2 to form a two-layer laminate; subjecting the two-layer resist to single exposure and development to produce fine patterns having an undercut cross section; depositing and/or sputtering an organic or inorganic thin layer with use of the resist pattern as a mask; and lifting off the resist pattern to leave a pattern of the thin layer in desired shape. <IMAGE>
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申请公布号 |
EP1469353(A1) |
申请公布日期 |
2004.10.20 |
申请号 |
EP20020781788 |
申请日期 |
2002.11.15 |
申请人 |
JSR CORPORATION |
发明人 |
OHTA, MASARU;ITO, ATSUSHI;MOCHIZUKI, ISAMU;INOMATA, KATSUMI;IWANAGA, SHINICHIRO |
分类号 |
G03F7/023;G03F7/095;G03F7/40;(IPC1-7):G03F7/26;G11B5/60;G03F7/022 |
主分类号 |
G03F7/023 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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