发明名称 TWO-LAYER FILM AND METHOD OF FORMING PATTERN WITH THE SAME
摘要 The invention concerns a lift-off process for patterning layers that are deposited and/or sputtered. The invention provides a two-layer resist and a patterning method using the resist. The patterning method can readily produce burr-free layers on a substrate. <??>The method comprises the steps of: sequentially applying positive radiation-sensitive resin compositions 1 and 2 to form a two-layer laminate; subjecting the two-layer resist to single exposure and development to produce fine patterns having an undercut cross section; depositing and/or sputtering an organic or inorganic thin layer with use of the resist pattern as a mask; and lifting off the resist pattern to leave a pattern of the thin layer in desired shape. <IMAGE>
申请公布号 EP1469353(A1) 申请公布日期 2004.10.20
申请号 EP20020781788 申请日期 2002.11.15
申请人 JSR CORPORATION 发明人 OHTA, MASARU;ITO, ATSUSHI;MOCHIZUKI, ISAMU;INOMATA, KATSUMI;IWANAGA, SHINICHIRO
分类号 G03F7/023;G03F7/095;G03F7/40;(IPC1-7):G03F7/26;G11B5/60;G03F7/022 主分类号 G03F7/023
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