发明名称 PARTIAL ETCHING FOR SURFACE MODIFICATION OR CONTROLLING OF DEPOSITION BY PULSE ION BEAM
摘要 PROBLEM TO BE SOLVED: To provide a method of high precision surface modification using ion beam. SOLUTION: This surface modification method includes a step to provide an electric-switch ion beam supply source 2; a step to define the residence time topology t(x, y) when setting the coordinate on the surface of sample to be x and y, as sum of the mechanical residence time t<SB>mechanical</SB>depending on the property of mechanical positioning system of the ion beam supply source, and the pulse type residence time t<SB>pulse</SB>depending on the property of the electric switch type ion beam supply source; a step to measure the initial surface profile z(x, y) of the sample; a step to specify the target final contour line profile f(x, y); a step to calculate the target dislodging topology h(x, y) from the difference of f(x, y) and z(x, y); a step 2 to calcualte the residence topology t(x, y) of the ion beam by deconvolution from h(x, y); and a step to modify the sample surface sequentially using the electric switch type pulse ion beam. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006344931(A) 申请公布日期 2006.12.21
申请号 JP20060113136 申请日期 2006.04.17
申请人 LEIBNIZ-INST FUER OBERFLAECHENMODIFIZIERUNG EV 发明人 HAENSEL THOMAS;SEIDEL PETER;NICKEL ANDREAS;THOMAS HANS-JUERGEN;SCHINDLER AXEL;BUCSI ISTVAN
分类号 H01L21/302;C23C16/48;C23F4/00;H01J37/305;H01L21/205 主分类号 H01L21/302
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