发明名称 Display having thin film transistors with channel region of varying crystal state
摘要 <p>A display including a driving substrate provided, arrayed thereon, with a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each the thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region, and in a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.</p>
申请公布号 EP1860699(A1) 申请公布日期 2007.11.28
申请号 EP20070010275 申请日期 2007.05.23
申请人 SONY CORPORATION 发明人 FUJINO, TOSHIO;MACHIDA, AKIO;KONO, TADAHIRO
分类号 H01L27/12;H01L21/20;H01L21/84 主分类号 H01L27/12
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