| 摘要 |
After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO<SUB>2 </SUB>film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO<SUB>2 </SUB>film on the top of the waveguide ridge, and burying the SiO<SUB>2 </SUB>film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO<SUB>2 </SUB>film of the waveguide ridge; the SiO<SUB>2 </SUB>film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.
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