发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which does not invite deterioration in performance of electrostatic discharge, suppressing an increase in size of a semiconductor chip associated with an increase in the number of electrode pads. <P>SOLUTION: A plurality of electrode pads 1a and 1b for external connection are arranged in a staggered shape. The electrode pad 1a and an input/output cell 2 in a side near a scribing area 3 are arranged in such a manner that the positions of the ends of them are set to be substantially the same. Protection circuits 6 and 7 against electrostatic discharge are arranged. The power side protection circuit 7 and the ground side protection circuit 6 are sequentially positioned from a side near the scribing area 3. A distance between the center positions of the electrode pad 1a and the ground side protection circuit 7 of the input/output cell 2 of itself and a distance between the center positions of the electrode pad 1b and the ground side protection circuit 7 of the input/output cell 2 of itself are short and are substantially the same between the input/output cells 2. Resistance to electrostatic discharge becomes strong. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008166495(A) |
申请公布日期 |
2008.07.17 |
申请号 |
JP20060354397 |
申请日期 |
2006.12.28 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TANIGUCHI KOICHI;MAEDE MASATO |
分类号 |
H01L21/822;H01L21/82;H01L21/8238;H01L27/04;H01L27/06;H01L27/092;H03K19/003 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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