| 发明名称 |
CHARGE DISSIPATION OF CAVITIES |
| 摘要 |
Structures and methods for the dissipation of charge build-up during the formation of cavities in semiconductor substrates.
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| 申请公布号 |
US2008318419(A1) |
申请公布日期 |
2008.12.25 |
| 申请号 |
US20070765768 |
申请日期 |
2007.06.20 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GRIFFIN BRIAN;BENSON RUSS |
| 分类号 |
H01L21/4763;H01L23/535 |
主分类号 |
H01L21/4763 |
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