| 摘要 |
<p>The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall elements, magnetoresistance elements, etc., optical devices, such as infrared sensors, etc., and electronic devices, such as transistors, etc., to be provided industrially, and a method for manufacturing the compound semiconductor lamination. An active layer (2), which is a compound semiconductor that does not contain As, is directly formed on an Si substrate (1). As is present at an interface of the active layer (2) and a single crystal layer of the Si substrate (1). The compound semiconductor contains at least nitrogen. The compound semiconductor is a single crystal thin film. The Si substrate (1) is a bulk single crystal substrate or a thin film substrate with an uppermost layer being Si.</p> |
