ELECTROSTATIC PROTECTIVE DEVICE

摘要

The present invention discloses an electrostatic protective device structure, which comprises a CMOS transistor that is disposed entirely above a P-type silicon substrate and arranged into a multi-finger-pattern structure, wherein on the outermost side on both sides of this electrostatic protective device structure is the source region of the MOS transistor, an active region of other drain region or source region in addition to the outermost source region on both sides is arranged in comb teeth pattern and in pairwise intersection, between the active regions of the adjacent drain region or source region is a field oxide region isolation, and on the drain region or source region is disposed a contact hole connecting metal with the active region, wherein the contact hole on the comb-tooth-pattern and pairwise intersected active region is located at the top of the comb-tooth-pattern active region, i.e. close to a side of the field oxide region isolation far away from the polysilicon gate. The present invention, mainly applied to electrostatic protection of a low-voltage MOS, is capable of not only improving its electrostatic protection capability effectively but also minimizing the occupied area of the protective device, and able to be used as both an electrostatic protective device and a power device.

主权项

1. An electrostatic protective device, comprising:
A plurality of CMOS transistors disposed entirely above a P-type silicon substrate and arranged into a multi-finger-like structure; a pair of outermost source regions of the CMOS transistors are situated on the outermost sides of the electrostatic protective device; at least one drain region and at least one source region forming an active region are situated in-between the pair of outermost source regions; a field oxide region is situated in each of the at least one drain region and the at least one source region; a plurality of contact holes is disposed on the at least one drain region and the at least one source region connecting metal in the active region; wherein the at least one drain region is arranged in comb tooth pattern and in pairwise intersection; wherein the at least one source region is arranged in comb tooth pattern and in pairwise intersection; wherein the plurality of contact holes on the comb-tooth-pattern and pairwise intersected active region are located at a tip portion of the comb-tooth-pattern active region, whereby the contact hole is closer to a side of the field oxide region isolation than the polysilicon gate.