Electrostatic Discharge Protection Structure And Fabrication Method Thereof

摘要

An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

主权项

1. A method of fabrication of an electrostatic discharge protection structure, the method comprising:
providing a substrate of a first type of electrical conductivity; forming a first isolation region and a second isolation region in the substrate; forming a well region of a second type of electrical conductivity in the substrate by ion implantation, the first isolation region located in the substrate, the second isolation region located in the well region; forming an oxide layer by thermal oxidation such that:
a first end of the oxide layer is disposed on the first isolation region and a second end of the oxide layer is disposed on the substrate, orthe first end of the oxide layer is disposed on the second isolation region and the second end of the oxide layer is disposed on the well region; forming a field plate structure on a side of the oxide layer by deposition, the side of the oxide layer facing away from the substrate; forming, by ion implantation, a substrate contact region of the first type of electrical conductivity in the substrate, a well contact region of the second type of electrical conductivity in the well region, a substrate counter-doped region of the second type of electrical conductivity in the substrate and between the substrate contact region and the well contact region, a well counter-doped region of the first type of electrical conductivity in the well region and between the substrate contact region and the well contact region, and a communication region, wherein the communication region is disposed at a lateral junction between the substrate and the well region and between the substrate counter-doped region and the well counter-doped region, and wherein the communication region is in contact with the substrate and the well region.