Organic-inorganic hybrid multilayer gate dielectrics for thin film transistors

摘要

Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.

主权项

1. A method of fabricating a thin film transistor comprising an organic-inorganic hybrid multilayer dielectric material, a gate electrode in contact with the organic-inorganic hybrid multilayer dielectric material, a thin film semiconductor, and source and drain electrodes in contact with the thin film semiconductor, wherein the organic-inorganic hybrid multilayer dielectric material comprises an inorganic primer layer and one or more bilayers deposited thereon, each bilayer comprising a π-polarizable layer and an inorganic oxide capping layer, wherein the inorganic oxide capping layer in each bilayer is coupled to the π-polarizable layer via bonds other than phosphonate bonds, the method comprising:
assembling the organic-inorganic hybrid multilayer dielectric material by performing one or more times the steps of (a) coupling a π-polarizable layer to either an existing inorganic primer layer or an existing inorganic oxide capping layer; and (b) coupling a new inorganic oxide capping layer to the π-polarizable layer via bonds other than phosphonate bonds; depositing a thin film semiconductor either directly adjacent to the organic-inorganic hybrid multilayer dielectric material or indirectly adjacent to the organic-inorganic hybrid multilayer dielectric material via an interlayer; forming source and drain electrodes in contact with the thin film semiconductor; and providing a gate electrode in contact with the organic-inorganic hybrid multilayer dielectric material.