| 发明名称 | Differential MOSCAP device | ||
| 摘要 | A differential MOS capacitor includes a first plurality of upper capacitor plates, a second plurality of upper capacitor plates, and a conductive plate. At least two of the second plurality of upper capacitor plates are spaced laterally from each other and are disposed laterally between at least two of the first plurality of upper capacitor plates. The conductive plate is configured to serve as a common bottom capacitor plate such that a first capacitor is formed by the first plurality of upper capacitor plates and the conductive plate and a second capacitor is formed by the second plurality of upper capacitor plates and the conductive plate. | ||
| 申请公布号 | US9385246(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201514594201 | 申请日期 | 2015.01.12 |
| 申请人 | Taiwan Semiconductor Manufacturing Co., Ltd. | 发明人 | Yen Hsiao-Tsung;Lin Yu-Ling;Kuo Chin-Wei;Jeng Min-Chie |
| 分类号 | H01L29/94;H01L23/522;H01L49/02 | 主分类号 | H01L29/94 |
| 代理机构 | Duane Morris LLP | 代理人 | Duane Morris LLP |
| 主权项 | 1. A differential MOS capacitor, comprising: a first plurality of upper capacitor plates; a second plurality of upper capacitor plates, at least two of the second plurality of upper capacitor plates being spaced laterally from each other and being disposed laterally between at least two of the first plurality of upper capacitor plates; and a conductive plate configured to serve as a common bottom capacitor plate such that a first capacitor is formed by the first plurality of upper capacitor plates and the conductive plate and a second capacitor is formed by the second plurality of upper capacitor plates and the conductive plate, wherein no electrical components other than the at least two of the second plurality of upper capacitor plates are disposed between the at least two of the first plurality of upper capacitor plates. | ||
| 地址 | Hsin-Chu TW | ||