SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

This semiconductor device manufacturing method has a step for forming an oxynitride film on a substrate by performing predetermined times a cycle of non-simultaneously performing: a step for supplying a starting material gas to the substrate through a first nozzle; a step for supplying a nitriding gas to the substrate through a second nozzle; and a step for supplying an oxidizing gas to the substrate through a third nozzle. In the step for supplying the nitriding gas, an inert gas is supplied at a first flow rate through the first nozzle and/or the third nozzle, and in the step for supplying the oxidizing gas, the inert gas is supplied at a second flow rate through the second nozzle, said second flow rate being higher than the first flow rate.