发明名称 Enhanced stitching by overlap dose and feature reduction.
摘要 A method is disclosed for processing exposure data for exposing a pattern on a target using a plurality of charged particle beams. The exposure data comprises pattern data representing features to be written on the target and exposure dose data describing exposure dose of the charged particle beams. Dose values of the exposure dose data are set such that a sum of dose values corresponding to a position in an overlap area of the target, where adjacent sub-areas overlap, exceeds a maximum dose value for non-overlap areas. The pattern data is divided into sub-sections comprising pattern data describing parts of the pattern to be written in corresponding sub-areas of the target. The pattern data comprises overlap pattern data describing a part of the pattern to be written in a corresponding overlap area, the overlap pattern data being processed to reduce a size of features described by the overlap pattern data.
申请公布号 NL2014309(B1) 申请公布日期 2016.07.19
申请号 NL20152014309 申请日期 2015.02.18
申请人 MAPPER LITHOGRAPHY IP B.V. 发明人 MARCO WIELAND
分类号 G03B27/42;G03F1/78;G03F7/20;G06F17/50;H01J37/30;H01J37/302;H01J37/317;H01L21/263 主分类号 G03B27/42
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