| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal nitride material for a thermistor that can be directly formed on a film or the like with non-burning and has high heat resistance and high reliability, a manufacturing method for the same and a film type thermistor sensor.SOLUTION: A metal nitride material used for a thermistor is represented by a general formula: MAl(NO)(here, M represents at least one element selected from the group consisting of Zr, Nb, Mo, Hf, Ta and W, and 0.65≤y/(x+y)≤0.98, 0.40≤z≤0.55, 0<u≤0.35, x+y+z=1). The crystal structure is a wurtzite type single phase of hexagonal system. A method of manufacturing the metal nitride material for the thermistor has a film forming step of forming a film by performing reactive spattering in a nitrogen and oxygen contained atmosphere by using an M-Al alloy spattering target (here, M represents at least one element selected from the group consisting of Zr, Nb, Mo, Hf, Ta and W).SELECTED DRAWING: Figure 1 |
