| 摘要 |
FIELD: physics.SUBSTANCE: invention relates to technology related to doping and diffusion of impurities in semiconductor processes, specifically to processes for redistribution of impurity diffusion depth from surface of semiconductor wafers, and can be used in manufacture of solar cells, semiconductor devices and integrated circuits. In process of doping of semiconductor wafers is fed to electrode substrate comprising a dopant material, and treated with electric pulses with high energy density. At point of contact of electrode substrate material is melted and locally occurs doping semiconductor material of electrode. Material processing time does not exceed several microseconds.EFFECT: technical result of invention is low cost, high performance and getting sharp boundary of diffusion zone.1 cl |
