Method to tune TiO_xstoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiO_x/Ti based MIS contact scheme for CMOS

摘要

Methods of depositing and tuning deposition of sub-stoichiometric titanium oxide are provided. Methods involve depositing highly pure and conformal titanium on a substrate in a chamber by (i) exposing the substrate to titanium tetraiodide, (ii) purging the chamber, (iii) exposing the substrate to a plasma, (iv) purging the chamber, (v) repeating (i) through (iv), and treating the deposited titanium on the substrate to form sub-stoichiometric titanium oxide. Titanium oxide may also be deposited prior to depositing titanium on the substrate. Treatments include substrate exposure to an oxygen source and/or annealing the substrate.

主权项

1. A method of forming titanium oxide on a semiconductor substrate in a chamber, the method comprising:
(a) depositing titanium on the substrate, wherein depositing titanium comprises:
(i) exposing the substrate to titanium tetraiodide,(ii) purging the chamber,(iii) exposing the substrate to an ignited plasma, and(iv) purging the chamber, and(v) repeating (i) through (iv) until the desired thickness of titanium is deposited; and (b) treating the substrate to form sub-stoichiometric titanium oxide, wherein the sub-stoichiometric titanium oxide comprises titanium oxide having the chemical formula TiOx, where x<2.