| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an oxide semiconductor film that can easily form the oxide semiconductor film used to provide a transistor which effectively operates, is small in difference between a leak current value (Ioff) at the point of time when the transistor begins to be used and a leak current value (Ioff) in stable operation and in shift width of a threshold voltage (V) in between the beginning of use and the stable operation, and has a high On-Off ratio (Ion/Ioff) as the ratio of a driving current (Ion) to a leak current (Ioff), and to provide an oxide semiconductor film manufactured by the method.SOLUTION: An oxide semiconductor film is manufactured by a method including 1) an ultraviolet-ray irradiation process of irradiating a precursor thin film of an oxide semiconductor with ultraviolet rays, and 2) a semiconductor film forming process in a high-frequency application device of processing the precursor thin film having been irradiated with the ultraviolet rays under a specific condition to form the oxide semiconductor film of the precursor thin film. |
