发明名称 |
SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER AND ITS MANUFACTURING METHOD, SOLAR CELL ELEMENT USING THE SAME AND ITS MANUFACTURING METHOD, AND SOLAR CELL |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate with a passivation film including a passivation layer whose film quality is excellent and which is excellent in patternability and passivation effect, and also to provide a method of manufacturing the semiconductor substrate with the passivation film, a solar cell element having excellent conversion efficiency and obtained by using the same, its manufacturing method, and a solar cell.SOLUTION: A semiconductor substrate with a passivation layer includes a passivation layer 5 obtained by imparting a metal compound of 0.8-18.0 mg per 100 cmto the whole area or a part on the semiconductor substrate and applying heat treatment thereto. The metal compound contains a compound represented by the following general formula (I) and water.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016201443(A) |
申请公布日期 |
2016.12.01 |
申请号 |
JP20150080030 |
申请日期 |
2015.04.09 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
HAYASAKA TAKESHI;NOJIRI TAKESHI;KURATA YASUSHI;TANAKA TORU;MORISHITA MASATOSHI;KODAMA SHUNSUKE |
分类号 |
H01L21/312;H01L31/0216;H01L31/068 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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