发明名称 Use of residual organic compounds to facilitate gate break on a carrier substrate for a semiconductor device
摘要 An encapsulant molding technique used in chip-on-board encapsulation wherein a residual organic compound layer on the surface of a substrate is used to facilitate removal of unwanted encapsulant material. An organic compound layer which inherently forms on the substrate during the fabrication of the substrate or during various chip attachment processes is masked in a predetermined location with a mask. The substrate is then cleaned to remove the organic compound layer. The mask protects the masked portion of the organic material layer which becomes a release layer to facilitate gate break. An encapsulant mold is placed over the substrate and chip and an encapsulant material is injected into the encapsulant mold cavity through an interconnection channel. The release layer is formed in a position to reside as the bottom of the interconnection channel. Preferably, the interconnection channel has a gate adjacent the encapsulant mold cavity. The encapsulant material solidifies and the encapsulant mold is removed, wherein the gate forms an indentation abutting the cavity. Excess encapsulant solidified in the interconnection channel is leveraged from the surface of the substrate and broken free at the indentation. The remaining release layer may then be removed.
申请公布号 US2001039120(A1) 申请公布日期 2001.11.08
申请号 US20010886782 申请日期 2001.06.21
申请人 WENSEL RICHARD W. 发明人 WENSEL RICHARD W.
分类号 H01L21/56;(IPC1-7):H01L21/302 主分类号 H01L21/56
代理机构 代理人
主权项
地址