发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can obtain a uniform plasma distribution by preventing a field concentration. <P>SOLUTION: The plasma processing apparatus includes an introducing piping for introducing a treating gas, and an exhaust pipe for exhausting inside of a vessel. The plasma processing apparatus further includes a plasma treating vessel 109 for generating a plasma in the interior, a substrate electrode 111 for placing and holding a sample 110 in the treating vessel 109, a dielectric plate 107 disposed on the upper surface of the treating vessel, an antenna element group having a plurality of circular arc-like antenna elements 106 disposed along the periphery of the dielectric plate, and a power dividing unit 104 for dividing a high frequency power into a plurality and supplying the divided high frequency powers to the plurality of the antenna elements 106 only from the same one direction end of the periphery. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004363247(A) 申请公布日期 2004.12.24
申请号 JP20030158199 申请日期 2003.06.03
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TAMURA HITOSHI;KOTO NAOYUKI
分类号 H05H1/46;B01J19/08;C23F4/00;H01L21/3065 主分类号 H05H1/46
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