| 摘要 |
PURPOSE: A method for filling via hall and a method of fabricating semiconductor package are provided to reduce the defective rate, simplify the process, and facilitate the massive manufacturing. CONSTITUTION: A conductive particle(2) comprises a diameter of 1nm to 30μm. A Polymer(3) has the hardening temperature being lower than the melting point of the conductive particle. The anisotropic insulated conductive agent(1) includes the polymer. The conductive particle has the diameter of 1nm to 30μm, and preferably 1nm to 30nm.
|
