| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas sensor that is superior in resistance to humidity, even if used in a high-temperature and high-humidity atmosphere. SOLUTION: The gas sensor 1 is constituted of a metal-oxide semiconductor part 41, the main ingredient of which is SnO<SB>2</SB>is formed; on the surface of the metal oxide semiconductor part 41, a catalyst part 42 constituted of Pd is formed distributedly; and the sensing part 42 is composed of the metal-oxide semiconductor part 41 and the catalyst part 42. Furthermore, on the sensing part 4, the insulation part 7, the main ingredient of which is SiO<SB>2</SB>is formed distributedly; and on the surface of the sensing part 4, on which the insulation part 7 is formed, the catalytic part 42 and insulation part 7 are formed on the surface of the metal-oxide semiconductor so as to make the surface additive ratio, which is the ratio of the number of atoms represented by Si/(Pd+Si)≥65% and≤97%, and make the surface additive ratio, which is the rate of the number of atoms represented by Si/(Sn+Si)≥75% and≤97%. COPYRIGHT: (C)2007,JPO&INPIT
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