| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase transformation memory element in which a cell size can be prevented from increasing, and to provide its manufacturing method. SOLUTION: The phase transformation memory element comprises a semiconductor substrate 21 having a phase transformation cell region 25 and a voltage application region 24, a first oxide film 26, a nitride film 27 and a second oxide film 28 formed on the semiconductor substrate 21, a first plug 32 formed in the phase transformation cell region contiguously to the first oxide film 26, the nitride film 27 and the second oxide film 28, a second plug 33 formed in the voltage application region contiguously to the first oxide film 26 and the nitride film 27, a conductive line 34 formed on the second plug 33, a third oxide film 35 formed on the first plug 32, the conductive line 34 and the second oxide film 28, a plug-like lower electrode 37 formed on the first plug 32 contiguously to the third oxide film 35 in direct contact with the first plug 32, and a phase transformation film 38 and an upper electrode 39 patterned on the lower electrode 37. COPYRIGHT: (C)2007,JPO&INPIT
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