发明名称 SOLID-STATE IMAGING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging element which can reduce a read voltage while avoiding reduction of charge transfer efficiency of a vertical charge transfer path and degradation of a blooming characteristic. SOLUTION: A solid-state imaging element 100 comprises a plurality of photoelectric converters 2 arranged two-dimensionally in horizontal and vertical direction for generating a signal charge by photoelectrically converting incident light, a plurality of vertical charge transfer paths 3 for vertically transferring the signal charge generated by the photoelectric converters 2, and a read gate 23 disposed between the photoelectric converters 2 and the vertical charge transfer paths 3 for transferring the signal charge accumulated in the photoelectric converters 2 to the charge transfer path 3. The vertical charge transfer path 3 has a vertical transfer channel 19 for transfer of the signal charge, and a charge transfer electrode 21 disposed opposed to the vertical transfer channel 19 for transferring the signal charge. The charge transfer electrode 21 is extended beyond the read gate 23 into the photoelectric converters 2. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006344800(A) 申请公布日期 2006.12.21
申请号 JP20050169601 申请日期 2005.06.09
申请人 FUJIFILM HOLDINGS CORP 发明人 KAWAI SHINICHI
分类号 H01L27/148;H04N5/335;H04N5/359;H04N5/369;H04N5/372 主分类号 H01L27/148
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