| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently reduce concentrating electric field intensity so as to have a sufficient breakdown voltage even for a high-voltage operation and also suppress current collapse. Ž<P>SOLUTION: A semiconductor device has a ground 11, and first and second insulating films 13 and 15 formed sequentially covering a ground surface 11a of the ground. The first and second insulating films has a hole portion 29 for gate formation formed penetrating the first and second insulating films continuously to expose the ground surface. Further, the semiconductor device has a gate electrode 33 which fills the hole portion for gate formation and covers a second insulating film surface at a periphery of the hole portion for gate formation. The hole portion for gate formation includes a first hole portion 21 bored in the first insulating film and a second hole portion 23 bored in the second insulating film larger so that an opening length in a gate length direction is larger than the first hole portion. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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