| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering system capable of changing a shielding plate without allowing a film deposition chamber to be opened to the atmosphere. Ž<P>SOLUTION: The sputtering system 1 deposits a sputtering substance of a target on a substrate inside a film deposition chamber 11A provided in a vacuum vessel 11. The sputtering system 1 comprises: a shielding plate 36 which is arranged between the target and the substrate and opposite to the target to control the thickness distribution of the sputtering substance to be deposited on the substrate; a shielding plate changing chamber 11C provided in the vacuum vessel 11 and communicated with the film deposition chamber 11A via a gate valve 11d; and moving means 100, 100a, 100b, 102a, 102b, 200, 300, 302, 304, 306, 308, 400 for moving the shielding plate 36 between the target and the substrate in the film deposition chamber 11A. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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