SHEATH ELECTRIC FIELD MEASUREMENT METHOD, COATING FORMATION METHOD, SHEATH ELECTRIC FIELD MEASUREMENT DEVICE, AND COATING FORMATION DEVICE

摘要

PROBLEM TO BE SOLVED: To implant ions, with a uniform ion flux, into a thin film that is formed in a processing object member when forming a coating over the processing object member while using a plasma, and to easily measure a strength of a sheath electric field of the plasma that influences the ion flux.SOLUTION: When measuring the sheath electric field during plasma generation, a sheath layer is irradiated with a laser light using a laser saturation absorption spectrum method. At such a time, a wavelength of the laser light is modulated by a preset modulation frequency and a light intensity of the laser light transmitted through the sheath layer is measured. A secondary modulation component of the modulation frequency for the light intensity is extracted from the measured light intensity, and information about a measurement absorption wavelength at which the laser light is absorbed and saturated in atoms in the sheath layer is calculated from the modulation component. The strength of the sheath electric field of the sheath layer is calculated using the information of the measurement absorption wavelength. When forming a deposition, based on the strength of the electric field of the sheath layer, the timing to implant the ions into the thin film that is formed over the processing object member is determined.SELECTED DRAWING: Figure 1