| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method by which deformation of a formed resist pattern is prevented. <P>SOLUTION: A resist layer is formed on a substrate using a positive resist material, the resist layer is patterned by sequentially carrying out prebaking, exposure and development, and the patterned resist layer is post-baked and then heat-treated at a starting temperature lower than the post-baking temperature in such a way that the temperature is raised to a final temperature of 140 to <160°C at a rate of temperature increase of at most 0.5°C/s while emitting ultraviolet light. <P>COPYRIGHT: (C)2007,JPO&INPIT |
