| 摘要 |
The present invention relates to a semiconductor device having a heterostructure. A buffer layer is formed on a substrate having an NMOS region and a PMOS region. On the buffer layer, a first drain region and a first source region having a heterostructure and spaced apart from each other are formed. A first channel region is formed between the first drain region and the first source region. A first gate electrode is formed in the first channel region. On the buffer layer, a second drain region and a second source region spaced apart from each other are formed. A second channel region containing a material different from that of the first channel region is formed between the second drain region and the second source region. A second gate electrode is formed in the second channel region. |
